The transient enhanced diffusion of implanted P was extensively investigated for various implantation and annealing conditions. The effective diffusivities of each annealing time period were determined in order to study the evolution of transient enhanced diffusion during low-temperature annealing. It was found that transient enhanced diffusion decayed, in the early stages of low-temperature annealing, until diffusion enhancement reached a steady state. Further annealing caused a significant decrease in diffusivity as transient enhanced diffusion was completed. It was also found that a higher implantation energy enhanced diffusion because of a slower decay of transient enhanced diffusion. However, a higher implantation dose introduced more diffusion enhancement without changing the decay behavior of transient enhanced diffusion. A severe dose-loss was observed during the transient enhanced diffusion period. It was found that the dose loss was controlled by transient enhanced diffusion. As a result, higher annealing temperatures and longer annealing times led to a greater P dose loss.

Time Dependence of Phosphorus Diffusion and Dose Loss during Post-Implantation Annealing at Low Temperatures. R.D.Chang, P.S.Choi, D.L.Kwong, M.Gardner, P.K.Chu: Japanese Journal of Applied Physics - 1, 2002, 41[3A], 1220-3