The Pt was diffused at 600, 700 or 800C into n-type epitaxial samples, with or without previous 2MeV electron irradiation to doses of 1014 to 1017/cm2. Without such irradiation, diffusion at 700 or 800C for 0.5h resulted in the presence of a single level in the deep-level transient spectrum. This was attributed to a Pt acceptor level at 0.23eV below the conduction band edge. No deep level was detected at lower diffusion temperatures. However, after prior irradiation and in-diffusion at 600C, this Pt level was again found in the deep-level transient spectrum. Depth-profiling showed that the Pt concentration increased with electron dose. Its value after in-diffusion, without prior irradiation at 750C, was comparable to that after in-diffusion at 600C following a dose of 1017/cm2.

Enhanced Diffusion of Platinum in Electron-Irradiated Silicon D.C.Schmidt, B.G.Svensson, J.L.Lindstrom, S.Godey, E.Ntsoenzok, J.F.Barbot, C.Blanchard: Materials Science and Engineering B, 1999, 57[2], 161-4