Epitaxial samples of n-type material were implanted with 850keV protons to doses of between 5.8 x 1011 and 5 x 1013/cm2. Subsequent Pt in-diffusion at 700C for 0.5h resulted in the creation of a single deep level which was attributed to the Pt acceptor level at 0.23eV below the conduction band edge. Depth-profiling of this level showed that the substitutional Pt mirrored the vacancy profile in the peak region around the projected range of the protons. A marked increase in the Pt concentration was also observed at lower depths. In the absence of ion implantation, no deep levels were detected after in-diffusion at 700C whereas, at 800C, the Pt deep-level concentration was lower than that reached after H pre-implantation to at least 5 x 1012/cm2. In-diffusion at 600C into implanted samples (5 x 1013/cm2) did not lead to enhanced Pt accumulation.

Proximity Gettering of Platinum in Proton-Irradiated Silicon D.C.Schmidt, B.G.Svensson, N.Keskitalo, S.Godey, E.Ntsoenzok, J.F.Barbot, C.Blanchard: Journal of Applied Physics, 1998, 84[8], 4214-8