Epitaxial n-type material was diffused with Pt for 0.5h at 400 to 600C, following room-temperature irradiation with 2MeV electrons to a dose of 1017/cm2. The Pt was detected only by using deep level transient spectroscopy, following diffusion at the highest temperature. For lower temperatures, defects which had not previously been reported appeared. These were thought to be interstitial in nature. The two principal defect levels were found to be located at 0.29 and 0.41eV below the conduction band. Compensation at the 2 lowest diffusion temperatures was extremely strong, as reflected by a marked reduction in the steady-state reverse bias capacitance during deep level transient spectroscopic measurements. This capacitance increased, following heat treatment at 500C. Deep level transient spectroscopic measurements down to 20K detected thermal donors, as well as some other defects which had not previously been reported.

The Evolution of Interstitial-Type Defects in Silicon during Platinum Diffusion from 400 to 600C Following 2MeV Electron Irradiation D.C.Schmidt, D.Aberg, B.G.Svensson, J.L.Lindström, J.F.Barbot, C.Blanchard: Materials Science and Engineering B, 1999, 68[2], 67-71