The effect of transient enhanced out-diffusion, from ion-doped Si layers, upon diffusion of the impurity into the bulk during rapid electron-beam annealing was studied. In specimens which were doped with P+ and As+ ions, the average coefficient for the diffusion of the impurity into the bulk under conditions of transient enhanced out-diffusion was a fraction of that in the case where no evaporation of the impurity took place. In the case of specimens which were doped with Sb+ ions, no diffusion of Sb into bulk Si under conditions which involved evaporation of the impurity was observed. There was instead a decrease in the depth of the position of the impurity. The resultant data indicated that evaporation of the impurity, especially transient enhanced out-diffusion early in the rapid thermal annealing treatment, slowed the diffusion of the impurity into the bulk.

Production of Shallow Ion-Implanted Layers using Rapid Electron-Beam Annealing under the Condition of Transient Enhanced Out-Diffusion V.A.Kagadei, D.I.Proskurovsky: Journal of Vacuum Science and Technology B, 2000, 18[1], 454-7