Native point defect concentrations were determined in samples, with single or polycrystalline CoSi2 films, by annealing (850C, 1h) Sb doping superlattices in N2. Use of a polycrystalline film resulted in enhanced Sb diffusion; thus indicating a vacancy supersaturation of about 2.4. Monocrystalline films maintained a vacancy concentration which was near to equilibrium.

Native Point Defects in Si with a CoSi2 Film - Single Crystal versus Polycrystalline. S.B.Herner, H.J.Gossmann, R.T.Tung: Applied Physics Letters, 1998, 72[18], 2289-91