It was pointed out that mathematically self-consistent solutions to the equations for dopant diffusion and oxidation stacking faults, which treated self-interstitial and vacancy concentrations as unknowns, had not previously been obtained. In order to solve this problem, a new equation was derived here from the dopant diffusion equations. By simultaneously solving this equation, and the oxidation stacking-fault equation, a set of mathematically self-consistent solutions was obtained. The mechanisms of dopant diffusion and Si self-diffusion were investigated by using experimental results for dopant diffusion and oxidation stacking faults at 1373K. It was found that Sb diffusion was essentially governed only by the vacancy mechanism.

Analysis of Dopant Diffusion in Si with Stacking Faults. T.Okino, T.Shimozaki: Materials Transactions, 1999, 40[6], 474-8