Dopant-defect interactions during ion implantation were investigated by monitoring the radiation-enhanced diffusion of Sb dopant diffusion markers. The radiation-enhanced diffusion of these markers was investigated as a function of implantation temperature (25 to 400C), dose (1014 to 1016/cm2) and energy (2MeV or 40keV). The experimental results were interpreted with the aid of atomistic simulations that included detailed defect-defect and dopant-defect interactions. It was demonstrated that the radiation-enhanced diffusion of Sb occurred at lower temperatures (below 200C) than had previously been reported, and that the magnitude of this effect increased with implantation temperature and dose. It was also demonstrated that radiation-enhanced diffusion of the dopants was measurable only within the damage cascades of the implanted ions. That is, there was no observable long-range diffusion of defects during implantation. The simulations demonstrated that the formation and dissolution of defect clusters during implantation played an important role in observed temperature- and dose-dependences.

Radiation-Enhanced Diffusion of Sb and B in Silicon during Implantation below 400C. V.C.Venezia, L.Pelaz, H.J.L.Gossmann, A.Agarwal, T.E.Haynes: Physical Review B, 2004, 69[12], 125215 (8pp)

Table 19

Diffusivity Ratios of 30Si and Sb in Si during Oxidation at 800 to 1100C