The effect of nitride films upon the diffusion of Sb was investigated in order to deduce the fractional interstitialcy component of their diffusivity. The nitride films, when deposited onto the Si substrate, acted as an extrinsic source of vacancies. It was found that Sb diffusion was enhanced under the nitride film. By monitoring variations in the retardation and enhancement, it was deduced that the interstitialcy component of Sb diffusion was approximately zero.

Fraction of Interstitialcy Component of Phosphorus and Antimony Diffusion in Silicon T.Shimizu, T.Takagi, S.Matsumoto, Y.Sato, E.Arai, T.Abe: Japanese Journal of Applied Physics - 1, 1998, 37[3B], 1184-7