The diffusion of Sb was studied as a function of a background Sn concentration. Enhanced Sb diffusion was observed for background levels that were higher than 5 x 1019/cm3. The Sn concentration for the onset of enhanced diffusion was appreciably lower than previously reported levels for high-concentration vacancy-mediated diffusion. The former work had concerned donor impurities, whereas Sn was an electrically neutral impurity.

Sn Background-Induced Diffusion Enhancement of Sb in Si J.Fage-Pedersen, A.N.Larsen, P.Gaiduk, J.L.Hansen, M.Linnarsson: Physical Review Letters, 1998, 81[26], 5856-9