Medium-energy coaxial impact-collision ion scattering spectroscopy was used to study the depth profiles and lattice location of Sb atoms in Si/Sb(δ-doped)/Si(001) structures which had been prepared by solid phase epitaxy. The Sb atoms were observed to diffuse into the Si capping layer at concentrations which were much higher than the solubility limit in a Si crystal. In addition, the concentration of diffused Sb atoms did not exhibit a monotonic decrease with increasing distance from the δ-layer plane. The lattice locations of the diffused Sb atoms were found to be strongly dependent upon the distance from the original Sb δ-layer.

Depth Profile and Lattice Location Analysis of Sb Atoms in Si/Sb(δ-Doped)/Si(001) Structures using Medium-Energy Ion Scattering Spectroscopy T.Kobayashi, C.F.McConville, G.Dorenbos, M.Iwaki, M.Aono: Applied Physics Letters, 1999, 74[5], 673-5