The Sb diffusion profiles in heavily As-doped samples were simulated by using just 2 essential parameters which corresponded to the diffusion of dopant species that contributed to Sb diffusion. These were the effective diffusivities for mechanisms which involved singly or doubly negatively-charged vacancies. The integrated diffusion model was used to decide which diffusing species affected diffusion profiles.

Simulation of Antimony Diffusion in Heavily Arsenic-Doped Silicon M.Uematsu: Japanese Journal of Applied Physics - 1, 1998, 37[4A], 1693-6