An investigation was made of Sb diffusion in p-, p+ and n+ substrates. It was shown that the estimated diffusion coefficient, which was associated with neutral point defects, was lower than reported values by an order of magnitude. However, it provided a better explanation of experimental data for a range of annealing conditions.

Sb Diffusion in Heavily-Doped Si Substrates K.Suzuki, H.Tashiro, T.Aoyama: Journal of the Electrochemical Society, 1999, 146[1], 336-8