The effect of defects which were introduced by the room-temperature high-energy implantation of Si and As ions was investigated. The MeV ions induced a transient enhanced diffusion of ion-implanted Sb, and this increased with increasing vacancy supersaturations which were generated in the Sb-doped region by the knock-on recoil mechanism. The transient enhanced diffusion persisted for a few minutes during annealing at 800 or 900C. The results indicated that, at these temperatures, the build-up and decay of vacancy supersaturations in the near-surface region occurred on a shorter time-scale than the release of interstitials from the buried damaged layer. The dominant role which was played by vacancies was also indicated by the very low transient enhanced diffusion which was observed in B-doped samples that were subjected to similar conditions. During annealing at 1000C for 0.25h, there was some sign of a retardation effect upon Sb diffusion which was attributed to interstitials flowing from the deep region. The results of defect injection by non-amorphizing medium-energy implantation indicated that a smaller but non-negligible effect of Sb transient enhanced diffusion persisted even under conditions where B diffusion was strongly enhanced.

Vacancy Effects in Transient Diffusion of Sb Induced by Ion Implantation of Si+ and As+ Ions G.Lulli, M.Bianconi, S.Solmi, E.Napolitani, A.Carnera: Journal of Applied Physics, 2000, 87[12], 8461-6