The dopant behavior of 1.5MeV implanted Sb in Si(100), before and after irradiation with 8MeV C+ ions, was investigated. The irradiation stimulates the re-growth in Si lattice and induces a high Sb substitution of 93% after a thermal anneal of 400C. At higher temperatures, a significant Sb diffusion towards the amorphous/crystalline interface was detected in the ion-irradiated sample. It was suggested that the vacancy supersaturation produced during ion irradiation was dominantly responsible for the significant modification of dopant substitution, redistribution, and diffusion. Point defects created during precipitation also seem to influence the dopant diffusion.

Anomalous Behavior of Sb Implanted Si after Mega-Electron-Volt Carbon Irradiation. S.Dey, S.Varma: Journal of Applied Physics, 2001, 90[5], 2618-20