The effects of stress upon equilibrium point defect populations and dopant diffusion in single crystals free of extended defects were reviewed. The thermodynamic relationships which were presented permitted the direct comparison of hydrostatic and biaxial stress experiments, and of atomistic calculations under hydrostatic and non-hydrostatic stress, for any proposed mechanism. Experiments on the effects of pressure and stress upon diffusivity were reviewed. In the case of Sb in Si, using the measured effect of hydrostatic pressure upon diffusion as input data and assuming a pure vacancy mechanism, the measured effect of biaxial stress upon diffusion could be predicted successfully; with no free parameters. In the case of B in Si, an apparent discrepancy between the hydrostatic and biaxial stress effects existed; assuming a pure interstitial-based mechanism.

Stress Effects on Defects and Dopant Diffusion in Si. M.J.Aziz: Materials Science in Semiconductor Processing, 2001, 4[5], 397-403

Table 20

Arrhenius Parameters for Sb Diffusion on (111) Si Surfaces