Despite the technological importance of nanostructured materials, mass transport phenomena, such as diffusion and reaction, at interfaces were still poorly understood when nanoscale distances or short diffusion times were involved. Some typical examples were presented here, including the effect of biaxial stresses on the diffusion of Sb in Si/Si1-xGex heterostructures. It was shown some surprising nanoscale effects could occur, such as an increase in diffusion coefficients by biaxial compression for a vacancy-mediated dopant.

Reaction and Diffusion at Interfaces of Micro- and Nanostructured Materials. P.Gas, C.Girardeaux, D.Mangelinck, A.Portavoce: Materials Science and Engineering B, 2003, 101[1-3], 43-8