It was pointed out that mathematically self-consistent solutions to the equations for dopant diffusion and oxidation stacking faults, which treated self-interstitial and vacancy concentrations as unknowns, had not previously been obtained. In order to solve this problem, a new equation was derived here from the dopant diffusion equations. By simultaneously solving this equation, and the oxidation stacking-fault equation, a set of mathematically self-consistent solutions was obtained. The mechanisms of dopant diffusion and Si self-diffusion were investigated by using experimental results for dopant diffusion and oxidation stacking faults at 1373K. It was found that self-diffusion depended upon the interstitialcy mechanism to the extent of about 60%. By fitting previously obtained approximate solutions to the present solutions, it was estimated that the self-interstitial and vacancy diffusivities were 3.1 x 10-14 and 1.6 x 10-15m2/s, respectively, at 1373K.

Analysis of Dopant Diffusion in Si with Stacking Faults. T.Okino, T.Shimozaki: Materials Transactions, 1999, 40[6], 474-8

Table 22

Diffusivity Enhancement or Retardation for 30Si in Si