A novel attempt was made to study diffusion in Si by using a simulation procedure known as Chandrashekar-hopping. The procedure was applied here to the study of self and impurity diffusion. The Fokker-Planck form of Fick’s law was used and a smooth continuous position probability density for the diffusing particle, which represented the position of the diffusing particle at any time, was used for the evaluation of the diffusion constant. The results agreed reasonably well with available experimental and theoretically reported values. The existence of traps in the semi-conducting media was also clearly demonstrated.

Self and Impurity Diffusion in Si - Simulation by Chandrasekhar-Hopping. S.D.D.Roy, K.Ramachandran: Systems Analysis Modelling Simulation, 2003, 43[4], 443-54