Self-diffusion in Si was investigated under extrinsic carrier conditions by monitoring the diffusion of 30Si in isotopically enriched Si layers with B and P background doping. At 1000C, it was found that the Si self-diffusion coefficient was slightly enhanced in both n- and p-type backgrounds. This was direct evidence of the existence of both negatively and positively charged native point defects in Si. A simple model involving 3 charge states was used to explain the data, which yield the relative contributions of these charge states to the overall self-diffusion coefficient and the locations of the deep levels they introduce in the band gap.

Silicon Self-Diffusion under Extrinsic Conditions. A.Ural, P.B.Griffin, J.D.Plummer: Applied Physics Letters, 2001, 79[26], 4328-30