Transient-enhanced shape transformation of nanostructured Si(001) surfaces during in vacuo annealing at 900 to 950C for a few minutes was reported. Marked surface mass transport was found; concomitant with the development of low-energy facets on surfaces that were covered by native oxide. The enhanced surface mass transport ceases after the oxide was completely desorbed, and it was also not observed on surfaces where the native oxide had been removed by HF before annealing.

Transient-Enhanced Si Diffusion on Native-Oxide-Covered Si(001) Nanostructures during Vacuum Annealing. H.Lichtenberger, M.Mühlberger, F.Schäffler: Applied Physics Letters, 2003, 82[21], 3650-2