The 2-dimensional diffusion of Si self-interstitials (I) from a sub-micron laterally confined source was investigated in detail. High-resolution scanning capacitance microscopy was used for quantitative measurement of the B transient enhanced diffusion induced by the I flux generated by a low-energy Si implantation through a sub-micron oxide mask. It was shown that the I depth penetration depended strongly upon the original lateral size of the source. The 2-dimensional I diffusion was well described by a 2-dimensional rate equation model; using the same physical parameters valid for 1-dimensional diffusion.

Direct Observation of Two-Dimensional Diffusion of the Self-Interstitials in Crystalline Si. F.Giannazzo, S.Mirabella, D.De Salvador, E.Napolitani, V.Raineri, A.Carnera, A.V.Drigo, A.Terrasi, F.Priolo: Physical Review B, 2002, 66[16], 161310 (4pp)