The effect of ion mass upon transient enhanced diffusion, and defect evolution after ion implantation, was studied by using atomistic simulations. The transient enhanced diffusion which was caused by B, P and As implants, with equal energy and range, was analyzed. It was found that the transient enhanced diffusion increased with ion mass for equal-range implants, and that species with different mass but equal energy caused approximately the same amount of transient enhancement. Heavier ions produced a greater redistribution of Si atoms; thus leading to a larger excess of interstitials deeper in the bulk and an excess of vacancies closer to the surface. In the case of heavy ions, more interstitials escaped recombination with vacancies, were stored in clusters, and then contributed to transient enhanced diffusion. The latter could be described in terms of an additive factor that increased with implanted ion mass.

Modelling of the Ion-Mass Effect upon Transient Enhanced Diffusion. L.Pelaz, G.H.Gilmer, M.Jaraiz, S.B.Herner, H.J.Gossmann, D.J.Eaglesham, G.Hobler, C.S.Rafferty, J.Barbolla: Applied Physics Letters, 1998, 73[10], 1421-3