The effect of C upon self-interstitial diffusion was studied by means of kinetic Monte Carlo simulations. It was found that modest levels of C (above 1017/cm3) significantly reduced the effective interstitial diffusivity. By fitting self-interstitial profiles, the migration energies and pre-factors of the effective diffusivity were determined for various background C levels. Previous experiments, which had been performed on samples with significant levels of C in an attempt to measure the effective diffusivity by monitoring the spreading of B marker layers, were also reconsidered. It was shown that the presence of B in δ-doped markers significantly affected the measured self-interstitial diffusivity.

A Kinetic Monte Carlo Study of the Effective Diffusivity of the Silicon Self-Interstitial in the Presence of Carbon and Boron. M.D.Johnson, M.J.Caturla, T.Diaz de la Rubia: Journal of Applied Physics, 1998, 84[4], 1963-7