The effects of electromigration in thin metal films was studied by means of Monte Carlo simulations which were based upon an atomic diffusion model that was particularly suitable for treating polycrystalline 3-dimensional films. The interatomic interactions were estimated by using a simplified Morse potential, and the driving force which was exerted by the charge-carrier flux was represented as a perturbation of the diffusion activation barrier. The local current density was calculated by using an equivalent resistor network. The simulated stresses were applied to various situations; including a triple point. The results demonstrated the possibility of reproducing the initial stages of void formation by using an atomistic model.

Three-Dimensional Monte Carlo Simulations of Electromigration in Polycrystalline Thin Films. P.Bruschi, A.Nannini, M.Piotto: Computational Materials Science, 2000, 17[2-4], 299-304