The adsorption and diffusion of Si adatoms, near to the DB step on the hydrogenated (100) surface, were studied by using a first-principles total-energy method. The energy barrier for a Si adatom of the upper terrace, which was bound to the step edge, was 1.1eV.

Chemical Differences in Surface Diffusion - Si and Ge Adatoms at the DB Step on the Hydrogenated Si(100) Surface S.Jeong, A.Oshiyama: Physical Review B, 1999, 60[16], R11269-72