Self-diffusivity in the melt was studied via pulsed laser melting of 30Si ion-implanted Si-on-insulator thin films. Secondary ion mass spectrometry was used to measure 30Si+ depth profiles, before and after melting and solidification. Melt-depth versus time and total melt duration were monitored by means of time-resolved lateral electrical conductance and optical reflectance measurements. One-dimensional diffusion simulations were used to match the final 30Si+ concentration profile, given the initial concentration profile and the melt-depth profile. The self-diffusivity at the melting point was equal to 4.0 x 10-4cm2/s.

Self-Diffusivity of Liquid Silicon Measured by Pulsed Laser Melting P.G.Sanders, M.J.Aziz: Journal of Applied Physics, 1999, 86[8], 4286-61