By using ab initio calculations, the paths and activation energies were determined for the diffusion of group-IV atoms on top of the As layer on As-passivated Si(111), and for exchange with an As atom. The Sn atoms remained on top of the As layer.

Surfactant Mediated Heteroepitaxy versus Homoepitaxy - Kinetics for Group-IV Adatoms on As-Passivated Si(111) and Ge(111). K.Schroeder, A.Antons, R.Berger, S.Blügel: Physical Review Letters, 2002, 88[4], 046101 (4pp)