Simulated annealing was used to perform simultaneous regressions of multiple models: for Zn diffusion in Si wafers and for the dynamics of the so-called interstitial/vacancy boundary during Czochralski crystal growth. A fully transient model for point-defect dynamics during crystal growth was derived which used an adaptive mesh refinement algorithm to minimize the computational expense of optimization. The resultant framework led to a quantitatively coherent picture for both systems, which were modeled using a single set of point-defect thermophysical properties. The results were shown to be entirely consistent with other model-fitting estimates, and indicated that - as the number of experiments which was considered simultaneously within this framework increased - it might be possible to specify these properties with higher precision.

Global Parameterization of Multiple Point-Defect Dynamics Models in Silicon. T.A.Frewen, T.Sinno, E.Dornberger, R.Hoelzl, W.von Ammon, H.Bracht: Journal of the Electrochemical Society, 2003, 150[11], G673-82