Out-diffusion experiments were performed on homogeneously Zn-doped samples at 850 to 1207C. The Zn diffusion profiles, as measured using spreading-resistance profiling, were accurately described in terms of the simultaneous occurrence of kick-out and dissociative diffusion mechanisms. When compared with Zn in-diffusion, the out-diffusion tended to be dominated by the dissociative mechanism. Numerical modelling of the out-diffusion profiles yielded quite reliable data for the vacancy transport coefficient. On the other hand, accurate determination of the vacancy equilibrium concentrations was impaired by the effect of vacancy agglomerates whose formation was driven by the vacancy supersaturation which arose from the dissociative out-diffusion of Zn.

Microscopic Defects in Silicon Induced by Zinc Out-Diffusion A.Giese, H.Bracht, N.A.Stolwijk, D.Baither: Materials Science and Engineering B, 2000, 71[1-3], 160-5