The out-diffusion of Zn from homogeneously Zn-doped samples at 1107C was studied. The depth distributions of Zn, as deduced by means of spreading-resistance profiling, were accurately described in terms of simultaneous contributions arising from kick-out and dissociative diffusion mechanisms. An analysis of the profiles revealed that Zn out-diffusion was mediated mainly by a dissociative mechanism. The fitting of Zn profiles yielded data on the transport capacity of vacancies, and their thermal equilibrium concentration.

Out-Diffusion of Zn from Si - a Method to Study Vacancy Properties in Si. A.Giese, H.Bracht, N.A.Stolwijk, J.T.Walton: Journal of Applied Physics, 1998, 83[12], 8062-4