Spreading-resistance profiling and deep-level transient spectroscopic studies were made of Zn diffusion at 1294K. The concentration profiles of substitutional Zn, in dislocation-free or highly dislocated samples, were described in terms of a diffusion mechanism which involved interstitial-substitutional exchange. Additional annealing at 873K, following quenching from the diffusion temperature, was required to activate the Zn in the case of dislocation-free material. The formation of Zn complexes with unwanted impurities occurred during quenching. Additional diffusion experiments and total energy calculations suggested that Ni was a likely candidate for the passivation of Zn. Total energy calculations indicated that the formation of complexes involving Zn and Ni depended upon the position of the Fermi level.

Point Defects in Silicon after Zinc Diffusion A.Masuhr, H.Bracht, N.A.Stolwijk, H.Overhof, H.Mehrer: Semiconductor Science and Technology, 1999, 14[5], 435-40