Modeling investigations were made of the difference in dopant implantation and diffusion between Si and SiGe. A lattice expansion theory was developed in order to account for the volume change due to Ge in Si, and its effect upon defect formation enthalpy. The theory predicted that As diffusion in SiGe was enhanced by a factor of about 10, as compared with bulk Si. These predictions were consistent with experiment. Dopant profiles for As were simulated by using various process simulators. The simulated profiles were also in good agreement with experiment.

Theory and Simulation of Dopant Implantation and Diffusion in SiGe. C.L.Liu, M.Orlowski, A.Thean, K.Beardmore, A.Barr, T.White, B.Y.Nguyen, H.Rueda, X.Y.Liu: Physica Status Solidi B, 2003, 239[1], 35-43