The diffusion behavior of ion-implanted As in strained-Si/relaxed-Si0.8Ge0.2 structures was studied during rapid thermal processing in O (interstitial injection) and NH3 (vacancy injection). During rapid thermal processing in an O ambient, As diffusion into SiGe was reduced while an NH3 ambient produced a strong enhancement; especially for short times. The results suggested that As diffusion in SiGe had a stronger vacancy component than did As diffusion in Si. Vacancy injection was also observed to enhance the diffusivity of Ge from relaxed SiGe into strained Si.

On the Mechanism of Ion-Implanted As Diffusion in Relaxed SiGe. S.Eguchi, J.J.Lee, S.J.Rhee, D.L.Kwong, M.L.Lee, E.A.Fitzgerald, I.Åberg, J.L.Hoyt: Applied Surface Science, 2004, 224[1-4], 59-62

Figure 16

Diffusivity of 195Au in a Si0.761Ge0.239 Epilayer