The Ge-concentration dependence of As diffusion in relaxed Si1–xGex, with Ge contents ranging from 0 to 40%, was investigated. Relaxed epitaxial layers were implanted with 15keV As-ions to a dose of 3 x 1015/cm2, and diffusion during furnace and rapid thermal annealing was studied. Under equilibrium extrinsic conditions, the As diffusivity increased exponentially with increasing Ge content. Under transient diffusion conditions, the As diffusivity was retarded, as compared with the diffusivity at longer times. A slight transient enhancement of As diffusion was observed in Si. The degree of transient retardation depended upon the Ge concentration.

Germanium-Concentration Dependence of Arsenic Diffusion in Silicon Germanium Alloys. S.Eguchi, C.N.Chleirigh, O.O.Olubuyide, J.L.Hoyt: Applied Physics Letters, 2004, 84[3], 368-70