The diffusion of implanted 195Au in relaxed low dislocation-density epilayers was measured, using radiotracer and serial sectioning techniques, at 700 to 950C (figure 16). The Ge content was between 0 and 24at%. In all cases, diffusion took place via the kick-out mechanism. This was controlled by self-interstitials at low Ge contents, at low temperatures, or at points which were close to the epilayer surface. In other cases, the diffusion was controlled by Au interstitials. The results were interpreted in terms of a mechanism in which alloy-retarded substitutional-interstitial diffusion played a major role.

Diffusion of Gold in Relaxed SiGe Epilayers R.Fischer, W.F.J.Frank, K.Lyutovich: Physica B, 1999, 273-274, 598-602