The diffusion of B was investigated in SiGe which had been grown using molecular beam epitaxy. The samples consisted of relaxed Si1–xGex, with x = 0, 0.01, 0.12 or 0.24. The B diffusion in relaxed samples exhibited little dependence upon the Ge content. The diffusion of B in compressively-strained Si0.88Ge0.12 and Si0.76Ge0.24, and tensile-strained Si and Si0.88Ge0.12, was also investigated. It was found that compressive strain decreased the diffusion coefficient of B, while tensile strain increased it.

Boron and Phosphorus Diffusion in Strained and Relaxed Si and SiGe. N.R.Zangenberg, J.Fage-Pedersen, J.Lundsgaard Hansen, A.Nylandsted Larsen: Journal of Applied Physics, 2003, 94[6], 3883-90