Laplace deep-level transient spectroscopy was used in situ, following low-temperature proton implantation of dilute Si1–xGex alloys, to identify the deep donor state of H which occupied a strained Si-Si bond-center site next to Ge. The activation energy for electron emission from the donor was about 0.158eV, when extrapolated to zero electrical field. A configuration diagram for the Ge-strained site was constructed on the basis of formation and annealing data. It was thereby deduced that alloying with about 1%Ge did not greatly affect the low-temperature migration of H as compared with elemental Si. Two bond-center type C-H centers were observed and it was concluded that C impurities acted as much stronger traps for H than did the alloy Ge atoms.

Bond-Center Hydrogen in Dilute Si1–xGex alloys - Laplace Deep-Level Transient Spectroscopy. K.Bonde Nielsen, L.Dobaczewski, A.R.Peaker, N.V.Abrosimov: Physical Review B, 2003, 68[4], 045204 (6pp)