The diffusion of P was investigated in SiGe which had been grown using molecular beam epitaxy. The samples consisted of relaxed Si1–xGex, with x = 0, 0.07, 0.12, 0.24 or 0.40. It was found that an increase in Ge content increased the diffusion coefficient upon going from Si to Si0.76Ge0.24.

Boron and Phosphorus Diffusion in Strained and Relaxed Si and SiGe. N.R.Zangenberg, J.Fage-Pedersen, J.Lundsgaard Hansen, A.Nylandsted Larsen: Journal of Applied Physics, 2003, 94[6], 3883-90