Modeling investigations were made of the difference in dopant implantation and diffusion between Si and SiGe. A lattice expansion theory was developed in order to account for the volume change due to Ge in Si, and its effect upon defect formation enthalpy. The theory predicted that P diffusion in SiGe was enhanced by a factor of about 2, as compared with bulk Si. These predictions were consistent with experiment. Dopant profiles for P were simulated by using various process simulators. The simulated profiles were also in good agreement with experiment.

Theory and Simulation of Dopant Implantation and Diffusion in SiGe. C.L.Liu, M.Orlowski, A.Thean, K.Beardmore, A.Barr, T.White, B.Y.Nguyen, H.Rueda, X.Y.Liu: Physica Status Solidi B, 2003, 239[1], 35-43

 

Table 27

Diffusivity of Sb in Strained Si1-xGex Epilayers

Temperature (C)

x

D (cm2/s)

740

0.2

1 x 10-17

790

0.2

6 x 10-17

815

0.2

1.6 x 10-16

815

0.1

1.8 x 10-17

830

0.2

2.5 x 10-16

840

0.2

3.5 x 10-16

855

0.1

8 x 10-17

905

0.1

4 x 10-16

925

0.1

8 x 10-16