The diffusion behavior of ion-implanted P in relaxed Si0.8Ge0.2 was investigated (figure 22). The dopant was observed to diffuse faster in SiGe, than in Si, under equilibrium extrinsic conditions. Simulations of the measured profiles suggested that the ratio of the effective diffusivity in Si0.8Ge0.2, as compared with that in Si, was approximately equal to 2.

Comparison of Arsenic and Phosphorus Diffusion Behavior in Silicon–Germanium Alloys. S.Eguchi, J.L.Hoyt, C.W.Leitz, E.A.Fitzgerald: Applied Physics Letters, 2002, 80[10], 1743-5