Liquid-phase epitaxial layers were grown from undersaturated Al/Ga/GaAs melts, and rocking curves were recorded. The angular separation was found to be reduced in re-melt layers as compared with liquid-phase epitaxially grown layers. Double-crystal X-ray and Lang topography techniques were used to study the dislocations in re-melt epitaxial layers. No misfit dislocations were observed in the latter.

Structural Characterisation of Remelt Liquid Phase Epitaxy Grown AlGaAs Heteroepitaxial Layer K.Jeganathan, C.Ferrari, J.Kumar: Journal of Crystal Growth, 1999, 203[3], 327-32