A systematic review was presented of intrinsic defects in this material, as studied using magnetic multiple resonance spectroscopy, as well as so-called forbidden MCDA electron paramagnetic resonance lines. These forbidden transitions differed from allowed ones since, in addition to the electron spin, the spin of the central nucleus of the defect also flipped. From such experiments it was possible to determine whether the defect symmetry was Td or lower, in cases where no angular dependence of the MCDA electron paramagnetic resonance spectra could be resolved. A recently performed analysis of the AsGaVAs defect (As antisite next to an As vacancy) was described.

Structural Analysis of Intrinsic Defects in GaAs and AlGaAs by Magneto-Optically Detected Magnetic Resonance Spectroscopy F.K.Koschnick, J.M.Spaeth: Physica Status Solidi B, 1999, 216[2], 817-907