Low temperature annealing of electron irradiation-induced deep levels in 4H-SiC was reported. The major deep level transient spectroscopy peak S2 associated with the energy level at Ec–0.39eV disappeared at 360 to 400K, and some rearrangement of the peak S3, associated with the defect Z1/Z2 with energy level at Ec–0.5/Ec–0.65eV occurred at 400 to 470K. A net free charge carrier concentration increase goes along with the disappearance of peak S2 at Ec–0.39eV, whereas the charge collection efficiency of the diode does not experience any significant change. An interpretation of the annealing of peak S2 on a microscopic scale was given.

Low Temperature Annealing of Electron Irradiation Induced Defects in 4H-SiC. A.Castaldini, A.Cavallini, L.Rigutti, F.Nava: Applied Physics Letters, 2004, 85[17], 3780-2