Deep level defects E1/E2 were observed in He-implanted, 0.3 and 1.7 MeV electron-irradiated n-type 6H–SiC. Similar to previous results, the behaviors of E1 and E2 (like the peak intensity ratio, the annealing behaviors or the introduction rates) often varied from sample to sample. This anomalous result was not expected of E1/E2; being usually considered to arise from the same defect located at the cubic and hexagonal sites respectively. The present study showed that this anomaly was due to another DLTS peak overlapping with the E1/E2. The activation energy and the capture cross section of this defect were EC–0.31eV and about 8 x 10–14cm2, respectively.

Anomalous Behaviors of E1/E2 Deep Level Defects in 6H Silicon Carbide. X.D.Chen, C.C.Ling, M.Gong, S.Fung, C.D.Beling, G.Brauer, W.Anwand, W.Skorupa: Applied Physics Letters, 2005, 86[3], 031903 (3pp)