Slow positron implantation spectroscopy (SPIS), based on the generation, implantation and subsequent annihilation of mono-energetic positrons in a sample, was used to study depth-dependent vacancy-type damage in ion-implanted 6H-SiC. The derivation of physical information from the Doppler-broadened annihilation lineshape was exemplified. It was found that the depth profile of vacancy-type damage formed in SiC co-implanted by Al+ and N+ at 800C, and subsequently annealed at 1200 and 1650C, strongly depends on the sequence of implantations and annealing conditions. These studies showed that annealing (1650C, 600s) was not sufficient to remove the vacancy-type damage created by ion implantation.

Slow Positron Implantation Spectroscopy - a Tool to Characterize Vacancy-Type Damage in Ion-Implanted 6H-SiC. G.Brauer, W.Anwand, P.G.Coleman, W.Skorupa: Vacuum, 2005, 78[2-4], 131-6