Transmission electron microscopy was applied to investigating defect formation in (00▪1)- and (11▪0)-oriented 4H-SiC crystals in which a high dose of phosphorous ions had been implanted at room temperature. Defect formation after post-implantation annealing was totally different for the two crystal orientations. The implanted layer of the (00▪1)-oriented crystal recrystallized to form a highly defective polycrystal containing 3C-SiC grains. On the other hand, the (11▪0)-oriented crystal was virtually defect-free except for a very thin residual amorphous film in the topmost region.

Defect Formation in (00▪1)- and (11▪0)-Oriented 4H-SiC Crystals P+-Implanted at Room Temperature. T.Okada, Y.Negoro, T.Kimoto, K.Okamoto, N.Kujime, N.Tanaka, H.Matsunami: Japanese Journal of Applied Physics, 2004, 43[10], 6884-9