It was noted that SiC bipolar devices exhibit degradation under forward-biased operation which was linked with a recombination enhanced motion of 2 glide dislocations having either Si or C core atoms. Calculations were made of the core structures and dynamics of partial dislocations in 3C and 2H-SiC by using density functional-based codes. Earlier theoretical work had reported on the structure, energetics and electronic activity of both Shockley partials, and on the formation and migration barriers of kinks. Here, the first results on the effect of charge upon dislocation kinks were presented.

The Effect of Charge on Kink Migration at 90° Partial Dislocations in SiC. A.T.Blumenau, T.A.G.Eberlein, R.Jones, S.Öberg, T.Frauenheim, P.R.Briddon: Physica Status Solidi A, 2005, 202[5], 877-82