The influence of epitaxial growth conditions such as C/Si ratio, growth temperature and growth rate on the propagation of basal plane dislocation from a 4H-SiC substrate to the epilayer was studied by reflection X-ray topography. It was observed that the growth temperature had no effect on the propagation of basal plane dislocation. On the contrary, a large number of basal plane dislocations in the substrate tend to propagate as basal plane dislocations into the epilayer under low C/Si ratio condition. A higher growth rate at a constant C/Si ratio also enhances the propagation of basal plane dislocation.

Influence of Growth Conditions on Basal Plane Dislocations in 4H-SiC Epitaxial Layer. T.Ohno, H.Yamaguchi, S.Kuroda, K.Kojima, T.Suzuki, K.Arai: Journal of Crystal Growth, 2004, 271[1-2], 1-7