An investigation was made of basal plane dislocations in thick 4H-SiC(00▪¯1) epilayers and the formation of stacking faults in the active region of pin diodes. Synchrotron reflection X-ray topography showed that epitaxial growth on (00▪¯1) was advantageous in preventing the propagation of basal plane dislocations from the substrate into the epilayer and obtaining a low basal plane dislocation density in the epilayer compared with growth on (00▪1). The current stress test of 4H-SiC(00▪¯1) pin diodes demonstrated the suppressed formation of stacking faults.

Growth of Thick 4H-SiC(000¯1) Epilayers and Reduction of Basal Plane Dislocations. H.Tsuchida, I.Kamata, T.Miyanagi, T.Nakamura, K.Nakayama, R.Ishii, Y.Sugawara: Japanese Journal of Applied Physics, 2005, 44[25], L806-8